TY - JOUR
T1 - A soft-solution electrochemical processing technique for preparing CdTe/n-Si(l 0 0) heterostructures
AU - Gómez, H.
AU - HENRIQUEZ NAVIA, RODRIGO GONZALO
AU - Schrebler, R.
AU - Riveros, G.
AU - Leinen, D.
AU - Ramos-Barrado, J. R.
AU - Dalchiele, E. A.
N1 - Funding Information:
This work has been supported by FONDECYT(Chile), project No. 8000022. E.A.D. thanks CSIC (Universidad de la República) and PEDECIBA-Fı́sica, UNESCO ( Uruguay). D.L and J.R.R.-B thank CYCIT (España) and UE (MAT2000-1505).
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2004/12/15
Y1 - 2004/12/15
N2 - The rear side of an n type ( 1 0 0) Si wafer polished on one side was chosen as a substrate for CdTe thin film electrodeposition because its high density of surface non-uniformities is expected to result in a macroscopic equalization of injection conditions for electrons along the surface and subsequent uniform deposit growth. The films were grown from a plating bath containing 5 mM TeO2, 0.5 M CdSO4, 0.5 M H 2SO4 and 0.5 M NH4F at a temperature of 85 °C. The deposition potential was selected after studying the electrochemical behavior of the precursors by cyclic voltammetry. EDS analysis showed that films with near stoichiometric composition were obtained at ca. -0.575 V vs SCE. XRD showed that the as deposited films are well crystallized with a preferential orientation along the cubic direction, whereas AFM images show uniform and compact morphology. XPS results revealed that Te-O bonds, mainly in the surface, are also present.
AB - The rear side of an n type ( 1 0 0) Si wafer polished on one side was chosen as a substrate for CdTe thin film electrodeposition because its high density of surface non-uniformities is expected to result in a macroscopic equalization of injection conditions for electrons along the surface and subsequent uniform deposit growth. The films were grown from a plating bath containing 5 mM TeO2, 0.5 M CdSO4, 0.5 M H 2SO4 and 0.5 M NH4F at a temperature of 85 °C. The deposition potential was selected after studying the electrochemical behavior of the precursors by cyclic voltammetry. EDS analysis showed that films with near stoichiometric composition were obtained at ca. -0.575 V vs SCE. XRD showed that the as deposited films are well crystallized with a preferential orientation along the cubic direction, whereas AFM images show uniform and compact morphology. XPS results revealed that Te-O bonds, mainly in the surface, are also present.
KW - CdTe
KW - Electrodeposition
KW - Si
UR - http://www.scopus.com/inward/record.url?scp=9244246281&partnerID=8YFLogxK
U2 - 10.1016/j.jelechem.2004.07.030
DO - 10.1016/j.jelechem.2004.07.030
M3 - Article
AN - SCOPUS:9244246281
VL - 574
SP - 113
EP - 122
JO - Journal of Electroanalytical Chemistry
JF - Journal of Electroanalytical Chemistry
SN - 1572-6657
IS - 1
ER -