Electrodeposition and characterization of ZnSe semiconductor thin films

G. Riveros, H. Gómez, R. Henríquez, R. Schrebler, R. E. Marotti, E. A. Dalchiele

Research output: Contribution to journalArticlepeer-review

114 Scopus citations


In this work, results on the preparation and characterization of ZnSe thin films obtained by electrodeposition are presented. Voltammetric curves were recorded in order to characterize the electrochemical behavior of the Zn+2/SeO2 system on different substrates. Thin films were deposited potentiostatically from an unstirred, deareated aqueous solution onto titanium, glass substrates coated with fluorine doped tin oxide and ITO glass substrates. The effect of main parameters such as the deposition potential, SeO2 concentration and annealing on film composition and structure were analyzed. The as-grown and treated layers were characterized by X-ray energy dispersive analysis, X-ray diffraction, scanning electron microscopy and photoelectrochemical studies. Optical measurements were done on these samples which gave a clear band edge near 2.6 eV quite close to the accepted room temperature value of 2.7 eV for ZnSe.

Original languageEnglish
Pages (from-to)255-268
Number of pages14
JournalSolar Energy Materials and Solar Cells
Issue number3
StatePublished - 31 Dec 2001


  • Electrodeposition
  • Optical reflectance
  • X-ray diffraction
  • ZnSe


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