Electrodeposition and characterization of ZnX (X=Se, Te) semiconductor thin films

G. Riveros, H. Gómez, R. Henríquez, R. Schrebler, R. Córdova, R. E. Marotti, E. A. Dalchiele

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


In present work we report the one step electrodeposition of ZnX (X = Se and Te) thin films in acid solution. In order to establish the appropriate conditions for the electrodeposition, a voltammetric and photovoltammetric study on different substrates was previously performed. The films were analyzed by different techniques (SEM, EDS, XRD and optical reflectance). The composition of the ZnTe films was very close to the stoichiometric one, instead, ZnSe films presented a selenium excess that can be eliminated with a proper annealing. Optical reflectance characterization of ZnSe and ZnTe samples grown on titanium gave direct band gaps values of 2.64 eV and 2.27 eV, respectively, in agreement with those reported in the bibliography.

Original languageEnglish
Pages (from-to)411-429
Number of pages19
JournalBoletin de la Sociedad Chilena de Quimica
Issue number4
StatePublished - Dec 2002


  • Electrodeposition
  • Semiconductors
  • ZnSe
  • ZnTe


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