Electrodeposition and characterization of ZnX (X=Se, Te) semiconductor thin films

G. Riveros; H. Gómez; R. Henríquez; R. Schrebler; R. Córdova; R. E. Marotti; E. A. Dalchiele

doi:10.4067/S0366-16442002000400013

Electrodeposition and characterization of ZnX (X=Se, Te) semiconductor thin films

G. Riveros, H. Gómez, R. Henríquez, R. Schrebler, R. Córdova, R. E. Marotti, E. A. Dalchiele

INSTITUTE OF CHEMISTRY

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23 Scopus citations

Abstract

In present work we report the one step electrodeposition of ZnX (X = Se and Te) thin films in acid solution. In order to establish the appropriate conditions for the electrodeposition, a voltammetric and photovoltammetric study on different substrates was previously performed. The films were analyzed by different techniques (SEM, EDS, XRD and optical reflectance). The composition of the ZnTe films was very close to the stoichiometric one, instead, ZnSe films presented a selenium excess that can be eliminated with a proper annealing. Optical reflectance characterization of ZnSe and ZnTe samples grown on titanium gave direct band gaps values of 2.64 eV and 2.27 eV, respectively, in agreement with those reported in the bibliography.

Original language	English
Pages (from-to)	411-429
Number of pages	19
Journal	Boletin de la Sociedad Chilena de Quimica
Volume	47
Issue number	4
DOIs	https://doi.org/10.4067/S0366-16442002000400013
State	Published - Dec 2002

Keywords

Electrodeposition
Semiconductors
ZnSe
ZnTe

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10.4067/S0366-16442002000400013

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title = "Electrodeposition and characterization of ZnX (X=Se, Te) semiconductor thin films",

abstract = "In present work we report the one step electrodeposition of ZnX (X = Se and Te) thin films in acid solution. In order to establish the appropriate conditions for the electrodeposition, a voltammetric and photovoltammetric study on different substrates was previously performed. The films were analyzed by different techniques (SEM, EDS, XRD and optical reflectance). The composition of the ZnTe films was very close to the stoichiometric one, instead, ZnSe films presented a selenium excess that can be eliminated with a proper annealing. Optical reflectance characterization of ZnSe and ZnTe samples grown on titanium gave direct band gaps values of 2.64 eV and 2.27 eV, respectively, in agreement with those reported in the bibliography.",

keywords = "Electrodeposition, Semiconductors, ZnSe, ZnTe",

author = "G. Riveros and H. G{\'o}mez and R. Henr{\'i}quez and R. Schrebler and R. C{\'o}rdova and Marotti, {R. E.} and Dalchiele, {E. A.}",

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TY - JOUR

T1 - Electrodeposition and characterization of ZnX (X=Se, Te) semiconductor thin films

AU - Riveros, G.

AU - Gómez, H.

AU - Henríquez, R.

AU - Schrebler, R.

AU - Córdova, R.

AU - Marotti, R. E.

AU - Dalchiele, E. A.

PY - 2002/12

Y1 - 2002/12

N2 - In present work we report the one step electrodeposition of ZnX (X = Se and Te) thin films in acid solution. In order to establish the appropriate conditions for the electrodeposition, a voltammetric and photovoltammetric study on different substrates was previously performed. The films were analyzed by different techniques (SEM, EDS, XRD and optical reflectance). The composition of the ZnTe films was very close to the stoichiometric one, instead, ZnSe films presented a selenium excess that can be eliminated with a proper annealing. Optical reflectance characterization of ZnSe and ZnTe samples grown on titanium gave direct band gaps values of 2.64 eV and 2.27 eV, respectively, in agreement with those reported in the bibliography.

AB - In present work we report the one step electrodeposition of ZnX (X = Se and Te) thin films in acid solution. In order to establish the appropriate conditions for the electrodeposition, a voltammetric and photovoltammetric study on different substrates was previously performed. The films were analyzed by different techniques (SEM, EDS, XRD and optical reflectance). The composition of the ZnTe films was very close to the stoichiometric one, instead, ZnSe films presented a selenium excess that can be eliminated with a proper annealing. Optical reflectance characterization of ZnSe and ZnTe samples grown on titanium gave direct band gaps values of 2.64 eV and 2.27 eV, respectively, in agreement with those reported in the bibliography.

KW - Electrodeposition

KW - Semiconductors

KW - ZnSe

KW - ZnTe

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U2 - 10.4067/S0366-16442002000400013

DO - 10.4067/S0366-16442002000400013

M3 - Article

AN - SCOPUS:0038390979

SN - 0366-1644

VL - 47

SP - 411

EP - 429

JO - Boletin de la Sociedad Chilena de Quimica

JF - Boletin de la Sociedad Chilena de Quimica

IS - 4

ER -

Electrodeposition and characterization of ZnX (X=Se, Te) semiconductor thin films

Abstract

Keywords

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