In current work we report the electrochemical deposition of In2S3 thin films from a In(ClO4)3 and S8 in dimethylsulfoxide (DMSO) solution. Potenciodynamic experiments were conducted to study the electrochemical response of the precursors in the organic solvent. Chronoamperometric measurements allowed to establish the nucleation-growth mechanism of the indium sulfide phase and also to build a proper potential step program for achieving adherent good quality thin films. SEM micrographs exhibited complete substrate coverage whereas EDAX analysis gave In/S ratio very close to 2/3. Grazing XRD analysis showed that the films were grown in the tetragonal phase without the presence of oxide or hydroxide phases as usually is reported in aqueous medium. Results open the possibility of applying the procedure to the electrodeposition of an alternative In2S3 buffer layer onto copper indium diselenide substrates for evaluating the performance of the corresponding solar cell.
|Number of pages||14|
|Journal||International Journal of Electrochemical Science|
|State||Published - Mar 2013|
- Buffer Layer
- CIGS solar cells