TY - JOUR
T1 - Growth studies and characterisation of In 2 S 3 thin films deposited by atomic layer deposition (ALD)
AU - Naghavi, N.
AU - Henriquez, R.
AU - Laptev, V.
AU - Lincot, D.
N1 - Funding Information:
The authors would like to thank S. Borensztajn and F. Pellier for SEM and TEM measurements. This work was supported by the European Commission (contract no. ENK5-CT-2000-00331) and ADEME ECODEV program in France.
PY - 2004/1/30
Y1 - 2004/1/30
N2 - An increased attention is devoted to interfacial In 2 S 3 thin films because of their potential application as a new generation of buffer layer in copper indium gallium diselenide (CIGS)-based solar cells. In this paper, thin films of In 2 S 3 were deposited on soda lime glass and SnO 2 -coated glass using indium acetylacetonate (In(acac) 3 ) and H 2 S precursors by atomic layer deposition (ALD), a sequential chemical vapour deposition technique allowing the formation of dense and homogeneous films. The effect of temperature on the film kinetics has been studied. In a temperature window between 130 and 260°C, a maximum growth rate of about 0.7 Å per cycle is obtained at 180°C. The structure and morphology of films were characterised by XRD, SEM and TEM. The ALD-In 2 S 3 thin films are crystallised in a tetragonal form with band gap values of about 2.7 eV. Electrical properties have been addressed by using impedance measurements on semiconductor electrolyte junctions. The films are n-type semiconductors with a doping level around 10 16 -10 17 cm -3 and possess a good blocking behaviour under reverse bias. The flat band potential is about -1.1 V versus MSE. These figures are close to those measured under similar conditions with CdS buffer layers and could explain the good cell performances obtained with ALD-In 2 S 3 .
AB - An increased attention is devoted to interfacial In 2 S 3 thin films because of their potential application as a new generation of buffer layer in copper indium gallium diselenide (CIGS)-based solar cells. In this paper, thin films of In 2 S 3 were deposited on soda lime glass and SnO 2 -coated glass using indium acetylacetonate (In(acac) 3 ) and H 2 S precursors by atomic layer deposition (ALD), a sequential chemical vapour deposition technique allowing the formation of dense and homogeneous films. The effect of temperature on the film kinetics has been studied. In a temperature window between 130 and 260°C, a maximum growth rate of about 0.7 Å per cycle is obtained at 180°C. The structure and morphology of films were characterised by XRD, SEM and TEM. The ALD-In 2 S 3 thin films are crystallised in a tetragonal form with band gap values of about 2.7 eV. Electrical properties have been addressed by using impedance measurements on semiconductor electrolyte junctions. The films are n-type semiconductors with a doping level around 10 16 -10 17 cm -3 and possess a good blocking behaviour under reverse bias. The flat band potential is about -1.1 V versus MSE. These figures are close to those measured under similar conditions with CdS buffer layers and could explain the good cell performances obtained with ALD-In 2 S 3 .
KW - Atomic layer deposition
KW - Characterisation
KW - In S
KW - Thin film deposition
UR - http://www.scopus.com/inward/record.url?scp=0346122813&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2003.08.011
DO - 10.1016/j.apsusc.2003.08.011
M3 - Article
AN - SCOPUS:0346122813
SN - 0169-4332
VL - 222
SP - 65
EP - 73
JO - Applied Surface Science
JF - Applied Surface Science
IS - 1-4
ER -