TY - JOUR
T1 - Morphological, structural, and photoelectrochemical characterization of n-type Cu2O thin films obtained by electrodeposition
AU - Grez, Paula
AU - Herrera, Francisco
AU - Riveros, Gonzalo
AU - Ramírez, Andrés
AU - Henríquez, Rodrigo
AU - Dalchiele, Enrique
AU - Schrebler, Ricardo
PY - 2012/12
Y1 - 2012/12
N2 - Thin films of copper(I) oxide (Cu2O) were electrodeposited on fluorine-doped tin oxide predeposited glass substrates, by reduction of Cu 2+ from Cu(II) acetate acid aqueous solutions. The Cu2O was potentiostatically grown at a potential value of -0.450V (vs. SMSE) at 70°C. The Cu2O thin films were characterized by means of scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy (XPS), optical transmission, electrochemical impedance spectroscopy, and photoelectrochemical experiments. Through these techniques, it was possible to establish the cubic Cu2O phase with a high crystallinity and a strong preferential growth along the [200] and [220] directions. Cu2O thin films show oxygen vacancies with formation of a nonstoichiometric compound with the presence of Cu(0) in the crystal lattice as determined by XPS analysis. In addition, Cu2O was used as the photoanode for the I- oxidation reaction when the system was illuminated (Φ0=50. 0mWcm-2). The films exhibited a clear n-type semiconductor behavior, which was in agreement with the Mott-Schottky results. This behavior was explained by considering the nonstoichiometry of the oxide.
AB - Thin films of copper(I) oxide (Cu2O) were electrodeposited on fluorine-doped tin oxide predeposited glass substrates, by reduction of Cu 2+ from Cu(II) acetate acid aqueous solutions. The Cu2O was potentiostatically grown at a potential value of -0.450V (vs. SMSE) at 70°C. The Cu2O thin films were characterized by means of scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy (XPS), optical transmission, electrochemical impedance spectroscopy, and photoelectrochemical experiments. Through these techniques, it was possible to establish the cubic Cu2O phase with a high crystallinity and a strong preferential growth along the [200] and [220] directions. Cu2O thin films show oxygen vacancies with formation of a nonstoichiometric compound with the presence of Cu(0) in the crystal lattice as determined by XPS analysis. In addition, Cu2O was used as the photoanode for the I- oxidation reaction when the system was illuminated (Φ0=50. 0mWcm-2). The films exhibited a clear n-type semiconductor behavior, which was in agreement with the Mott-Schottky results. This behavior was explained by considering the nonstoichiometry of the oxide.
KW - CuO
KW - electrodeposition
KW - photoelectrochemical properties
KW - thin films
UR - http://www.scopus.com/inward/record.url?scp=84871219547&partnerID=8YFLogxK
U2 - 10.1002/pssa.201228286
DO - 10.1002/pssa.201228286
M3 - Article
AN - SCOPUS:84871219547
SN - 1862-6300
VL - 209
SP - 2470
EP - 2475
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 12
ER -