One-step electrodeposition of ZnO2 -ZnS thin-film mixtures onto n-InP(111) and n-InP(100) substrates

R. Henríquez; H. Gómez; P. Grez; D. Lincot; M. Froment; E. A. Dalchiele; G. Riveros

doi:10.1149/1.2779601

One-step electrodeposition of ZnO2 -ZnS thin-film mixtures onto n-InP(111) and n-InP(100) substrates

R. Henríquez, H. Gómez, P. Grez, D. Lincot, M. Froment, E. A. Dalchiele, G. Riveros

INSTITUTE OF CHEMISTRY

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Abstract

Electrodeposition of ZnS- ZnO2 film mixtures onto monocrystalline n-InP substrates through the simultaneous electroreduction of dioxygen and sulfur in the presence of zinc ions in dimethyl sulfoxide solution is reported. The films were thick, compact, transparent, and with a flat morphology. The mixture of phases was confirmed by the analysis of the reflection high-energy electron diffraction patterns. The optical absorption gave an Eg value of 3.47 eV, which agrees with the presence of ZnO in the mixture. The properties of the films suggest it might be a good alternative to replace the CdS window layer in Cu(In,Ga) Se2 -based photovoltaic devices.

Original language	English
Pages (from-to)	134-138
Number of pages	5
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	11
DOIs	https://doi.org/10.1149/1.2779601
State	Published - 2007

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title = "One-step electrodeposition of ZnO2 -ZnS thin-film mixtures onto n-InP(111) and n-InP(100) substrates",

abstract = "Electrodeposition of ZnS- ZnO2 film mixtures onto monocrystalline n-InP substrates through the simultaneous electroreduction of dioxygen and sulfur in the presence of zinc ions in dimethyl sulfoxide solution is reported. The films were thick, compact, transparent, and with a flat morphology. The mixture of phases was confirmed by the analysis of the reflection high-energy electron diffraction patterns. The optical absorption gave an Eg value of 3.47 eV, which agrees with the presence of ZnO in the mixture. The properties of the films suggest it might be a good alternative to replace the CdS window layer in Cu(In,Ga) Se2 -based photovoltaic devices.",

author = "R. Henr{\'i}quez and H. G{\'o}mez and P. Grez and D. Lincot and M. Froment and Dalchiele, {E. A.} and G. Riveros",

year = "2007",

doi = "10.1149/1.2779601",

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pages = "134--138",

journal = "Electrochemical and Solid-State Letters",

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T1 - One-step electrodeposition of ZnO2 -ZnS thin-film mixtures onto n-InP(111) and n-InP(100) substrates

AU - Henríquez, R.

AU - Gómez, H.

AU - Grez, P.

AU - Lincot, D.

AU - Froment, M.

AU - Dalchiele, E. A.

AU - Riveros, G.

PY - 2007

Y1 - 2007

N2 - Electrodeposition of ZnS- ZnO2 film mixtures onto monocrystalline n-InP substrates through the simultaneous electroreduction of dioxygen and sulfur in the presence of zinc ions in dimethyl sulfoxide solution is reported. The films were thick, compact, transparent, and with a flat morphology. The mixture of phases was confirmed by the analysis of the reflection high-energy electron diffraction patterns. The optical absorption gave an Eg value of 3.47 eV, which agrees with the presence of ZnO in the mixture. The properties of the films suggest it might be a good alternative to replace the CdS window layer in Cu(In,Ga) Se2 -based photovoltaic devices.

AB - Electrodeposition of ZnS- ZnO2 film mixtures onto monocrystalline n-InP substrates through the simultaneous electroreduction of dioxygen and sulfur in the presence of zinc ions in dimethyl sulfoxide solution is reported. The films were thick, compact, transparent, and with a flat morphology. The mixture of phases was confirmed by the analysis of the reflection high-energy electron diffraction patterns. The optical absorption gave an Eg value of 3.47 eV, which agrees with the presence of ZnO in the mixture. The properties of the films suggest it might be a good alternative to replace the CdS window layer in Cu(In,Ga) Se2 -based photovoltaic devices.

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SN - 1099-0062

VL - 10

SP - 134

EP - 138

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 11

ER -

One-step electrodeposition of ZnO2 -ZnS thin-film mixtures onto n-InP(111) and n-InP(100) substrates

Abstract

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