This work shows a detailed study of the electrodeposition of Cu 2O thin films from DMSO solution employing Cu(ClO4) 2 and molecular oxygen as precursors. Through cyclic voltammetry experiences at different temperature, the potential interval where the electrodeposition of Cu2O is carried out was established. The films were obtained potentiostatically and were characterized through different techniques. The films were crystalline with a globular morphology showing a direct bandgap between 2.18 eV-2.25 eV depending on the temperature of electrodeposition. All the films showed a p-type semiconductor character with a doping level varying between 8.2 × 1018 cm-3-2.0 × 1019 cm-3. This difference is attributed to the increase of the stoichiometric defects in the films with the operation temperature.