A novel approach for the electrodeposition of epitaxial films of ZnSe on (111) and (100) InP using dimethylsulfoxide as a solvent

R. Henríquez, H. Gómez, G. Riveros, J. F. Guillemoles, M. Froment, D. Lincot

Resultado de la investigación: Contribución a una revistaArtículorevisión exhaustiva

14 Citas (Scopus)

Resumen

Results on the preparation and characterization of ZnSe epitaxial thin films obtained by electrodeposition on (111) and (100) n-type InP single-crystalline substrates, starting from elemental selenium dissolved in DMSO at 423 K, are reported. Voltammetric studies have been performed on these substrates and compared to SnO2:F covered glass substrates. They show substrate dependent behavior and the presence of parasitic faradaic reactions attributed to the formation of di-selenide anions. However, composition analysis of the films by electron dispersive spectroscopy revealed that, independent on the substrate, nearly stoichiometric ZnSe films are obtained within the deposition potential range. Scanning electron microscopy images present a specific effect of chloride ion on the films morphology, whereas their optical characterization showed a direct band gap value of 2.64 eV. The epitaxial quality of the deposits has been confirmed by reflection of high energy electron diffraction and atomic force microscopy techniques.

Idioma originalInglés
Páginas (desde-hasta)C75-C77
PublicaciónElectrochemical and Solid-State Letters
Volumen7
N.º6
DOI
EstadoPublicada - 2004
Publicado de forma externa

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