Changes in the surface activity of n-Si after being exposed to a solution containing hydroxyl (OH) radicals were approached. These changes caused by the interaction between silicon and the OH radicals were characterized by analyzing the nucleation and growth mechanisms of copper electrodeposited on silicon. Thus, both copper depositions on n-Si without prior exposure to hydroxyl radicals and with it at different exposure periods were analyzed. By means of j/t transients analysis a change in the nucleation and growth mechanisms of copper on n-Si was observed, from 3D progressive nucleation diffusion-controlled growth for the system unexposed to the radical to 3D instantaneous nucleation diffusion-controlled growth, when the semiconductor substrate was exposed to the radicals OH. These changes were corroborated through ex situ Atomic Force Microscopy.