Electrodeposition of CdTe thin films onto n-Si(1 0 0): Nucleation and growth mechanisms

H. Gómez, R. Henríquez, R. Schrebler, R. Córdova, D. Ramírez, G. Riveros, E. A. Dalchiele

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

48 Citas (Scopus)

Resumen

The mechanisms related to the initial stages of the nucleation and growth of cadmium telluride (CdTe) thin films on the rough face side of a (1 0 0) monocrystalline n-type silicon have been studied as a function of different potential steps that varied from an initial value of -0.200V to values comprised between -0.515 and -0.600V versus saturated calomel electrode (SCE). The analysis of the corresponding potentiostatic j/t transients suggests that the main phenomena involved at short times is the formation of a Te-Cd bi-layer (BL). For potentials below -0.540 V, the formation of this bi-layer can be considered independent of potential. At greater times, the mechanisms is controlled by two process: (i) progressive nucleation three dimensional charge transfer controlled growth (PN-3D)ct and (ii) progressive nucleation three dimensional diffusion controlled growth (PN-3D)diff, both giving account for the formation of conical and hemispherical nuclei, respectively. Ex situ AFM images of the surface seem to support these assumptions.

Idioma originalInglés
Páginas (desde-hasta)1299-1305
Número de páginas7
PublicaciónElectrochimica Acta
Volumen50
N.º6
DOI
EstadoPublicada - 30 ene. 2005

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